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aft09h310?03sr6 aft09h310?04gsr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistors n?channel enhancement?mode lateral mosfets these 56 watt asymmetrical doherty rf power ldmos transistors are designed for cellular base station applications covering the frequency range of 920 to 960 mhz. ? typical doherty single?carrier w?cdma performance: v dd = 28 volts, i dqa = 680 ma, v gsb = 0.4 vdc, p out = 56 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 920 mhz 17.9 47.4 8.2 ?28.5 940 mhz 18.0 48.5 8.1 ?31.2 960 mhz 18.2 47.3 7.9 ?35.0 features ? advanced high performance in?package doherty ? greater negative gate?source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13?inch reel. document number: aft09h310?03s rev. 1, 9/2013 freescale semiconductor technical data 920?960 mhz, 56 w avg., 28 v airfast rf power ldmos transistors aft09h310?03sr6 aft09h310?04gsr6 ni?1230s?4s aft09h310?03sr6 ni?1230gs?4l aft09h310?04gsr6 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb carrier peaking ? freescale semiconductor, inc., 2013. all rights reserved.
2 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 table 1. maximum ratings rating symbol value unit drain?source voltage v dss ?0.5, +70 vdc gate?source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 c case operating temperature range t c ?40 to +150 c operating junction temperature range (1,2) t j ?40 to +225 c cw operation @ t c = 25 c derate above 25 c cw 256 0.9 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperatu re 75 c, 56 w w?cdma, 28 vdc, i dqa = 680 ma, v gsb = 0.4 vdc, 940 mhz r jc 0.41 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22?a114) 2 machine model (per eia/jesd22?a115) b charge device model (per jesd22?c101) iv table 4. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics ? side a (4) (carrier) gate threshold voltage (v ds = 10 vdc, i d = 242 adc) v gs(th) 0.9 1.5 1.9 vdc gate quiescent voltage (v dd = 28 vdc, i da = 680 madc, measured in functional test) v gsa(q) 1.7 2.1 2.5 vdc drain?source on?v oltage (v gs = 10 vdc, i d = 1.0 adc) v ds(on) 0.05 0.2 0.4 vdc on characteristics ? side b (4) (peaking) gate threshold voltage (v ds = 10 vdc, i d = 310 adc) v gs(th) 0.9 1.5 1.9 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1.0 adc) v ds(on) 0.05 0.2 0.4 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes ? an1955. 4. each side of device measured separately. (continued)
aft09h310?03sr6 aft09h310?04gsr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd = 28 vdc, i dqa = 680 ma, v gsb = 0.4 vdc, p out = 56 w avg., f = 920 mhz, single?carrier w?cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 17.7 17.9 20.7 db drain efficiency d 45.3 47.4 ? % output peak?to?average ratio @ 0.01% probability on ccdf par 7.6 8.2 ? db adjacent channel power ratio acpr ? ?28.5 ?27.3 dbc load mismatch (in freescale test fixture, 50 ohm system) i dqa = 680 ma, f = 940 mhz vswr 10:1 at 32 vdc, 280 w cw (4) output power (3 db input overdrive from 180 w cw rated power) no device degradation typical performances (2) (in freescale doherty test fixture, 50 ohm system) v dd = 28 vdc, i dqa = 680 ma, v gsb = 0.4 vdc, 920?960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 180 ? w p out @ 3 db compression point (5) p3db ? 390 ? w am/pm (maximum value measured at the p3db compression point across the 920 to 960 mhz frequency range) ? 31.7 ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 45 ? mhz gain flatness in 40 mhz bandwidth @ p out = 56 w avg. g f ? 0.3 ? db gain variation over temperature (?30 c to +85 c) g ? 0.015 ? db/ c output power variation over temperature (?30 c to +85 c) p1db ? 0.035 ? db/ c 1. part internally matched both on input and output. 2. measurements made with device in an asymmetrical doherty configuration. 3. measurements made with device in straight lead configuration before any lead forming operation is applied. lead forming is us ed for gull wing (gs) parts. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. p3db = p avg + 7.0 db where p avg is the average output power measured using an unclipped w?cdma single?carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 figure 2. aft09h310?03sr6 test circuit component layout ? 920?960 mhz aft09h310?4s rev. 5 cut out area c11 - - c1 c7 c5 r1 c3 c6 c4 c9 z1 r3 c10 r2 c8 c12 c2 c14 c30 c32 c17 c18 c25 c26 c21 c24 c22 c23 c19 c20 c29 c13 c31 v gga v dda c p v ggb v ddb c15 c16 c27 c28 table 5. aft09h310?03sr6 test circuit component designations and values ? 920?960 mhz part description part number manufacturer c1, c2, c3, c4 47 pf chip capacitors gqm1875c2e470jb15 muruta c5, c6 8.2 pf chip capacitors gqm1875c2e8r2cb12d muruta c7, c10 1.2 pf chip capacitors gqm1875c2e1r2bb15 muruta c8, c9 6.8 pf chip capacitors gqm1875c2e6r8bb15 muruta c11, c12 10 f chip capacitors gqm1875c2e6r8cb12d muruta c13, c14, c15, c16, c17, c18 68 pf chip capacitors gqm2195c2e680gb15 muruta c19, c20, c21 6.8 pf chip capacitors gqm2195c2e6r8bb15 muruta c22 3.3 pf chip capacitor gqm2195c2e3r3bb15 muruta c23, c24 3.9 pf chip capacitors gqm2195c2e3r9bb15 muruta c25, c26 4.7 pf chip capacitors gqm2195c2e4r7bb15 muruta c27, c28 1.8 pf chip capacitors gqm2195c2e1r8bb15 muruta c29, c30 10 f chip capacitors c5750x7s2a106m230k tdk c31, c32 470 f, 63 v chip capacitors mcgpr100v477m16x32-rh multicomp r1, r2 5.1 , 1/10 w chip resistors crcw06035r10fkea vishay r3 50 , 10 w termination 06012a25x50?2 anaren z1 800?1000 mhz, 5 db, directional coupler xc0900a-05s anaren pcb 0.020 , r = 3.5 ro4350 rogers
aft09h310?03sr6 aft09h310?04gsr6 5 rf device data freescale semiconductor, inc. typical characteristics parc (db) -2.6 -1 -1.4 -1.8 -2.2 -3 820 acpr f, frequency (mhz) figure 3. single?carrier output peak?to?average ratio compression (parc) broadband performance @ p out = 56 watts avg. 10 20 19 18 -42 50 40 30 20 -22 -26 -30 -34 d , drain efficiency (%) d g ps , power gain (db) 17 16 15 14 13 12 11 840 860 880 900 920 940 960 980 10 -38 acpr (dbc) parc v dd = 28 vdc, p out = 56 w (avg.) i dqa = 680 ma, v gsb = 0.4 vdc single-carrier w-cdma 3.84 mhz channel bandwidth figure 4. intermodulation distortion products versus two?tone spacing two-tone spacing (mhz) 10 -70 -20 -30 -40 -60 1 100 imd, intermodulation distortion (dbc) -50 im5-u im5-l im7-l im7-u figure 5. output peak?to?average ratio compression (parc) versus output power p out , output power (watts) 0 -2 30 1 -1 -3 output compression at 0.01% probability on ccdf (db) 15 45 60 90 0 60 50 40 30 20 10 d , drain efficiency (%) -3 db = 82 w 75 d acpr parc acpr (dbc) -40 -28 -30 -32 -36 -34 -38 20 g ps , power gain (db) 19 18 17 16 15 14 g ps -1 db = 33 w -2 db = 59 w -4 g ps input signal par = 9.9 db @ 0.01% probability on ccdf im3-l 2 two-tone measurements (f1 + f2)/2 = center frequency of 940 mhz v dd = 28 vdc, i dqa = 680 ma, v gsb = 0.4 vdc f = 940 mhz, single-carrier w-cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probability on ccdf v dd = 28 vdc, p out = 50 w (pep) i dqa = 680 ma, v gsb = 0.4 vdc im3-u
6 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single?carrier w?cdma power gain, drain efficiency and acpr versus output power -10 -20 15 21 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 20 19 10 100 400 10 -60 acpr (dbc) 18 17 16 0 -30 -40 -50 figure 7. broadband frequency response 0 24 f, frequency (mhz) v dd = 28 vdc p in = 0 dbm i dqa = 680 ma v gsb = 0.4 vdc 16 12 8 gain (db) 20 4 750 800 850 900 950 1000 1050 1100 1150 gain 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz v dd = 28 vdc, i dqa = 680 ma v gsb = 0.4 vdc, single-carrier w-cdma 3.84 mhz, channel bandwidth input signal par = 9.9 db @ 0.01% probability on ccdf d
aft09h310?03sr6 aft09h310?04gsr6 7 rf device data freescale semiconductor, inc. v dd = 28 vdc, i dqa = 694 ma, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max output power p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.16 - j2.31 1.24 + j2.27 3.28 - j1.37 20.3 52.8 190 54.5 -8.1 940 1.35 - j2.39 1.40 + j2.40 3.44 - j1.49 20.2 52.9 193 55.0 -7.5 960 1.63 - j2.70 1.64 + j2.55 3.64 - j1.33 20.1 53.0 200 55.7 -8.2 f (mhz) z source ( ) z in ( ) max output power p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.16 - j2.31 1.26 + j2.47 4.06 - j1.21 17.9 53.9 244 56.5 -13 940 1.35 - j2.39 1.44 + j2.60 4.14 - j1.14 18.0 53.9 247 57.5 -12 960 1.63 - j2.70 1.72 + j2.76 4.29 - j0.91 17.8 54.0 252 58.0 -13 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 8. carrier side load pull performance ? maximum power tuning v dd = 28 vdc, i dqa = 694 ma, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max drain efficiency p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.16 - j2.31 0.81 + j1.89 0.96 - j0.03 24.8 49.9 99 68.9 -21 940 1.35 - j2.39 0.94 + j1.98 0.95 - j0.14 24.9 49.9 98 69.9 -21 960 1.63 - j2.70 1.07 + j2.08 0.86 - j0.21 25.0 49.6 92 71.0 -24 f (mhz) z source ( ) z in ( ) max drain efficiency p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.16 - j2.31 0.89 + j2.16 1.06 + j0.03 22.8 50.8 121 70.9 -29 940 1.35 - j2.39 1.06 + j2.28 1.10 - j0.07 22.8 50.9 124 72.0 -27 960 1.63 - j2.70 1.39 + j2.49 1.40 - j0.21 21.7 51.8 153 71.6 -23 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 9. carrier side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 v dd = 28 vdc, v gsb = 0.4 vdc, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max output power p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.72 - j3.65 1.84 + j3.30 4.60 - j2.13 13.7 53.8 241 55.6 -8.3 940 2.37 - j3.46 2.28 + j3.50 5.46 - j2.55 13.3 53.9 245 53.1 -7.3 960 2.89 - j3.77 2.85 + j3.70 5.68 - j2.16 13.3 54.0 250 54.1 -7.9 f (mhz) z source ( ) z in ( ) max output power p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.72 - j3.65 1.99 + j3.42 5.63 - j2.02 11.2 54.9 312 56.1 -11 940 2.37 - j3.46 2.43 + j3.61 6.13 - j1.80 11.1 55.0 313 55.8 -10 960 2.89 - j3.77 3.06 + j3.78 6.35 - j1.22 11.1 55.0 318 56.3 -10 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 10. peaking side load pull performance ? maximum power tuning v dd = 28 vdc, v gsb = 0.4 vdc, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ) z in ( ) max drain efficiency p1db z load (1) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.72 - j3.65 1.63 + j3.16 1.40 - j0.57 14.9 51.3 135 70.4 -15 940 2.37 - j3.46 1.95 + j3.29 0.95 - j0.75 14.8 50.1 102 72.3 -17 960 2.89 - j3.77 2.52 + j3.52 1.33 - j0.87 14.8 51.1 130 72.7 -16 f (mhz) z source ( ) z in ( ) max drain efficiency p3db z load (2) ( ) gain (db) (dbm) (w) d (%) am/pm ( ) 920 1.72 - j3.65 1.74 + j3.32 1.57 - j0.45 12.9 52.2 167 71.4 -19 940 2.37 - j3.46 2.16 + j3.51 1.67 - j0.54 12.8 52.3 171 72.1 -18 960 2.89 - j3.77 2.71 + j3.69 1.55 - j0.69 12.8 52.2 164 73.2 -20 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 11. peaking side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft09h310?03sr6 aft09h310?04gsr6 9 rf device data freescale semiconductor, inc. p1db ? typical carrier side load pull contours ? 940 m hz -5 1 -1 2 34 06 0 -2 -3 5 -4 1 -5 1 -1 2 34 06 0 -2 -3 5 -4 1 -5 1 -1 2 34 06 0 -2 -3 5 -4 1 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p1db load pull output power contours (dbm) real ( ) -5 1 -1 imaginary ( ) 2 34 06 0 -2 -3 5 -4 1 figure 13. p1db load pull efficiency contours (%) real ( ) imaginary ( ) imaginary ( ) figure 14. p1db load pull gain contours (db) real ( ) figure 15. p1db load pull am/pm contours ( ) real ( ) imaginary ( ) p e 52.5 52 51.5 51 50.5 49.5 50 49 48.5 p e 42 44 46 48 50 52 54 56 58 p e 19 19.5 20 20.5 21 21.5 22 22.5 23 p e -10 -8 -12 -14 -16 -18 -20 -22
10 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 p3db ? typical carrier side load pull contours ? 940 m hz -5 1 -1 2 34 06 0 -2 -3 5 -4 1 -5 1 -1 2 34 06 0 -2 -3 5 -4 1 -5 1 -1 2 34 06 0 -2 -3 5 -4 1 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p3db load pull output power contours (dbm) real ( ) -5 1 -1 imaginary ( ) 2 34 06 0 -2 -3 5 -4 1 figure 17. p3db load pull efficiency contours (%) real ( ) imaginary ( ) imaginary ( ) figure 18. p3db load pull gain contours (db) real ( ) figure 19. p3db load pull am/pm contours ( ) real ( ) imaginary ( ) p e 52.5 52 51.5 51 50.5 50 53.5 53 49.5 42 44 46 48 50 52 54 56 p e 40 19 19.5 20 20.5 21 p e 17 17.5 18 18.5 -12 -14 p e -16 -18 -20 -22 -24 -26 -28
aft09h310?03sr6 aft09h310?04gsr6 11 rf device data freescale semiconductor, inc. p1db ? typical peaking side load pull contours ? 940 m hz 3 45 1 2 67 0 3 45 1 2 67 0 3 45 1 2 67 0 -5 0 -2 -1 -3 -4 -5 0 -2 -1 -3 -4 -5 0 -2 3 45 1 -1 -3 -4 2 67 imaginary ( ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p1db load pull output power contours (dbm) real ( ) -5 0 -2 imaginary ( ) -1 -3 -4 figure 21. p1db load pull efficiency contours (%) real ( ) figure 22. p1db load pull gain contours (db) real ( ) figure 23. p1db load pull am/pm contours ( ) real ( ) imaginary ( ) imaginary ( ) p e 53.5 53 52.5 52 51.5 51 50.5 50 49.5 48 46 50 52 54 56 58 60 p e 44 48 12.5 13 p e 13.5 14 14.5 15 14.5 -10 p e -6 -8 -12 -14 -16 -18 -20 0
12 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 p3db ? typical peaking side load pull contours ? 940 m hz 2 34 07 1 56 2 34 07 1 56 2 34 07 1 56 -5 0 -2 -1 -3 -4 -5 0 -2 -1 -3 -4 -5 0 -2 -1 -3 -4 imaginary ( ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 24. p3db load pull output power contours (dbm) real ( ) -5 0 -2 imaginary ( ) 2 34 07 -1 -3 -4 1 figure 25. p3db load pull efficiency contours (%) real ( ) figure 26. p3db load pull gain contours (db) real ( ) figure 27. p3db load pull am/pm contours ( ) real ( ) imaginary ( ) 56 imaginary ( ) p e 54.5 54 53.5 53 52.5 52 51.5 -12 -14 -18 -22 51 50.5 48 46 50 p e 42 44 52 54 56 58 10.5 11 11.5 12 12.5 13 p e p e -16 -20 -28 -26 -24
aft09h310?03sr6 aft09h310?04gsr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6
aft09h310?03sr6 aft09h310?04gsr6 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6
aft09h310?03sr6 aft09h310?04gsr6 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 july 2013 ? initial release of data sheet 1 sept. 2013 ? on characteristics table, side b (peaking): corrected v gs(th) typ value from 2.0 to 1.5 vdc, p. 2
18 rf device data freescale semiconductor, inc. aft09h310?03sr6 aft09h310?04gsr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salest ermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft09h310?03s rev. 1, 9/2013

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